sep. 2000 FS50SMJ-3 outline drawing dimensions in mm to-3p mitsubishi nch power mosfet FS50SMJ-3 high-speed switching use application motor control, lamp control, solenoid control dc-dc converter, etc. v v a a a a a w c c g 150 20 50 200 50 50 200 150 C55 ~ +150 C55 ~ +150 4.8 v gs = 0v v ds = 0v l = 100 m h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v dss v gss i d i dm i da i s i sm p d t ch t stg symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 4v drive v dss ... 150v r ds (on) (max) ... 30m w i d 50a integrated fast recovery diode (typ.) 125ns f qwe r q w e r wr q e
sep. 2000 v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr mitsubishi nch power mosfet FS50SMJ-3 high-speed switching use v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 150 1.0 1.5 23 24 0.58 62 8200 870 440 54 110 850 340 1.0 125 0.1 0.1 2.0 30 32 0.75 1.5 0.83 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = 150v, v gs = 0v i d = 1ma, v ds = 10v i d = 25a, v gs = 10v i d = 25a, v gs = 4v i d = 25a, v gs = 10v i d = 25a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 80v, i d = 25a, v gs = 10v, r gen = r gs = 50 w i s = 25a, v gs = 0v channel to case i s = 50a, dis/dt = C100a/ m s performance curves power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 5v 0 20 40 60 80 100 0 1.0 2.0 3.0 4.0 5.0 v gs = 10v t c = 25? pulse test 4v 3v p d = 150w 5v 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 v gs = 10v t c = 25? pulse test 4v 2.5v 3v 10 0 3 5 7 10 1 2 3 5 7 10 2 2 3 2 3 5 7 10 0 210 1 357 2 10 2 357 2 10 3 357 tw = 10 m s 100 m s 1ms 10ms dc t c = 25? single pulse 0 40 80 120 160 200 0 200 50 100 150
sep. 2000 0 20 40 60 80 100 0246810 t c = 25 c v ds = 10v pulse test 0 0.4 0.8 1.2 1.6 2.0 0246810 i d = 100a t c = 25 c pulse test 80a 20a 50a 40 0 8 16 24 32 10 0 357 2 10 1 357 2 10 2 357 23 v gs = 4v t c = 25 c pulse test 10v 10 2 3 5 7 10 3 2 3 5 7 10 4 2 3 2 5 7 10 0 210 1 357 357 2 10 2 357 23 2 ciss crss coss tch = 25 c f = 1mh z v gs = 0v 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 0 10 1 23 57 10 2 23 57 tch = 25 c v dd = 80v v gs = 10v r gen = r gs = 50 w t d(off) t f t r t d(on) on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) 10 0 10 1 23457 10 2 23457 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 t c = 25 c 75 c 125 c v ds = 10v pulse test mitsubishi nch power mosfet FS50SMJ-3 high-speed switching use
sep. 2000 0 2 4 6 8 10 0 40 80 120 160 200 v ds = 50v 80v 100v t ch = 25 c i d = 50a 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 ?0 0 50 100 150 v gs = 10v i d = 1/2i d pulse test 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = 1ma 0 20 40 60 80 100 0 0.4 0.8 1.2 1.6 2.0 t c = 125 c 75 c 25 c v gs = 0v pulse test gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) transient thermal impedance characteristics channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) ( c/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? p dm tw d = t tw t d = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0 0.8 1.6 2.4 3.2 4.0 ?0 0 50 100 150 v ds = 10v i d = 1ma threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) channel temperature tch ( c) mitsubishi nch power mosfet FS50SMJ-3 high-speed switching use
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